INTEGRATED CIRCUIT (IC) DEVICE FORMED ON SOI WAFER HAVING DOPED REGION SEPARATELY FORMED AND ELECTRICALLY CONNECTED UNDER INSULATING LAYER PROVIDED AS CHARGE SINK OR POTENTIAL WELL

摘要

PURPOSE: To lessen an SOI structure in susceptibility to electrostatic discharge or electrical excessive stress. ;CONSTITUTION: A highly-doped region 140 in an enough volume is provided under an insulating layer 120 of a wafer of SOI structure, and contact with a substrate is made from above the surface through an opening provided to the insulating layer 120. In manufacture, a highly-doped layer 140 is formed in the vicinity of the surface of a silicon substrate 130, an oxide layer is formed thereon, and another wafer provided with an oxide layer on its surface is joined to the oxide layer of the silicon substrate 130 (BESOI, etching silicon), or an oxide film is formed on the silicon substrate 130 by injection, and then the highly-doped layer 140 is formed (SIMOX, injected silicon with oxide).;COPYRIGHT: (C)1998,JPO