A process for the doping of zinc - selenide - single crystal.

摘要

A ZnSe single crystal which is obtainable by a method comprising steps of: placing a piece of a ZnSe polycrystal in a sealed reactor tube having an atmosphere of at least one gas selected from the group consisting of an inert gas, nitrogen and H2Se kept at pressure of from 0.1 Torr. to 100 Torr., moving the reactor tube containing the piece of ZnSe polycrystal through a low temperature first zone kept at a temperature of from room temperature to 100 DEG C, a temperature-raising second zone having a temperature gradient of from 50 DEG C/cm to 200 DEG C/cm, a high temperature third zone kept at a temperature of from 700 DEG C to 900 DEG C, a temperature-lowering fourth zone having a temperature gradient of from -200 DEG C/cm to -50 DEG C/cm and a low temperature fifth zone kept at a temperature of from room temperature to 100 DEG C in this order at a moving rate of from 0.05 mm/day to 5 mm/day while keeping the solid state of the ZnSe crystal whereby the ZnSe polycrystal is converted to a ZnSe single crystal, cutting the ZnSe single crystal to form a ZnSe single crystal chip or wafer, placing the ZnSe single crystal chip or wafer in a reactor containing, in case of doping an n-type impurity, zinc and the n-type impurity or a compound comprising the n-type impurity and zinc or, in case of doping a p-type impurity, selenium and the p-type impurity or a compound comprising the p-type impurity and selenium and heating the reactor at a temperature of 400 DEG C to 900 DEG C under pressure of 1 Torr. to 100 Torr. for at least 20 hours to diffuse the impurity atoms in the ZnSe single crystal.