A method for the production of semiconducting single crystals.

摘要

A n-type ZnSe thin layer is prepared by heating a ZnSe single crystal substrate in a hydrogen atmosphere under a pressure of from 0.1 Torr. to 10 Torr. at a temperature of from 250 DEG C to 450 DEG C while supplying a gaseous organozinc compound, H2Se gas and a gaseous organoaluminum compound in such amounts that a molar ratio of Se/Zn is from 10 to 100 and a molar ratio of Al/Zn is from 0.02 to 0.07 to grow the aluminum-doped ZnSe thin film on the ZnSe single crystal substrate.