1. bilaterally coating a wafer substrate with an insulating layer;2. producing a mask in the insulating layer on the top side of the wafer for future trench or groove etching, and a mask in the insulating layer on the bottom side of the wafer, using a first photolithographic step and reactive ion etching:3. producing a trench or a groove in the wafer substrate by reactive ion or anisotropic wet etching, respectively, followed by removing the insulating layer from the top side by etching:4. coating the surface of the wafer and the trench or groove with the desired cantilever beam and tip material, respectively;5. baring cantilever beam and tip in a second photolithographic step and dry or wet etching steps, respectively; and6. removing the supporting wafer material from the bottom side by anisotropic wet etching through the bottom side mask.;In a preferred embodiment the area on the top side of the cantilever beam corresponding to the remaining piece of wafer on the bottom side is bonded with a block of glass via 'mallory' bonding at about 300 C and 1000 V.;Furthermore, the surface of the wafer substrate and the trench can be coated in a first step with a material with nonconformal step coverage, and in a second step with a material with conformal step coverage. The cantilever beam and the tip are bared in the layer with conformal step coverage, and the supporting wafer and the layer with nonconformal step coverage are removed by selective etching through the bottom side mask.;The invention also comprises a micromechanical sensor for AFM/STM profilometry which is micromechanically manufactured from one piece of material."/> A process for the production of micromechanical illegal probe for afm / stm profilometry comprising - and a micromechanical sensing head.
首页> 外国专利> A process for the production of micromechanical illegal probe for afm / stm profilometry comprising - and a micromechanical sensing head.

A process for the production of micromechanical illegal probe for afm / stm profilometry comprising - and a micromechanical sensing head.

机译:一种用于afm / stm轮廓测量的微机械非法探针的生产方法,包括-和微机械传感头。

摘要

A method is described for producing micromechanical sensors for the AFM/STM profilometry, which consist of a cantilever beam with at least one tip at its end and a mounting block at the opposite, comprising:1. bilaterally coating a wafer substrate with an insulating layer;2. producing a mask in the insulating layer on the top side of the wafer for future trench or groove etching, and a mask in the insulating layer on the bottom side of the wafer, using a first photolithographic step and reactive ion etching:3. producing a trench or a groove in the wafer substrate by reactive ion or anisotropic wet etching, respectively, followed by removing the insulating layer from the top side by etching:4. coating the surface of the wafer and the trench or groove with the desired cantilever beam and tip material, respectively;5. baring cantilever beam and tip in a second photolithographic step and dry or wet etching steps, respectively; and6. removing the supporting wafer material from the bottom side by anisotropic wet etching through the bottom side mask.;In a preferred embodiment the area on the top side of the cantilever beam corresponding to the remaining piece of wafer on the bottom side is bonded with a block of glass via 'mallory' bonding at about 300 C and 1000 V.;Furthermore, the surface of the wafer substrate and the trench can be coated in a first step with a material with nonconformal step coverage, and in a second step with a material with conformal step coverage. The cantilever beam and the tip are bared in the layer with conformal step coverage, and the supporting wafer and the layer with nonconformal step coverage are removed by selective etching through the bottom side mask.;The invention also comprises a micromechanical sensor for AFM/STM profilometry which is micromechanically manufactured from one piece of material.
机译:描述了一种用于AFM / STM轮廓仪的微机械传感器的生产方法,该方法包括一个在其末端至少有一个尖端的悬臂梁和在其相对的一端有一个安装块,该方法包括: 1。在晶片基板上双面涂覆绝缘层; 2。使用第一个光刻步骤和反应性离子蚀刻,在晶片顶部的绝缘层中制造掩模以用于将来的沟槽或沟槽蚀刻,并在晶片底部的绝缘层中制造掩模: 3。通过反应离子或各向异性湿法刻蚀分别在晶片衬底中产生沟槽或凹槽,然后通过刻蚀从顶侧去除绝缘层: 4。分别用所需的悬臂梁和尖端材料涂覆晶片的表面以及沟槽或凹槽; 5。裸露的悬臂梁和尖端分别在第二光刻步骤和干法或湿法蚀刻步骤中;和 6。通过一个优选的实施方案,通过悬臂梁的顶侧上的区域对应于晶片上的剩余晶片,通过各向异性的湿蚀刻通过底侧的掩模从底侧去除支撑晶片材料。 ;底面在大约300 C和1000 V下通过“马氏体”粘合与一块玻璃粘合;此外,第一步可以在晶片衬底和沟槽的表面涂覆具有不规则台阶覆盖率的材料,在第二步中使用具有保形台阶覆盖率的材料。悬臂梁和尖端裸露在具有保形台阶覆盖层中,并且通过选择性蚀刻通过底侧掩模去除支撑晶片和具有非保形台阶覆盖层。;本发明还包括用于AFM / STM的微机械传感器由一件材料以微机械方式制造的轮廓仪。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号