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VLSI integration into a 3-D WSI dual composite module
VLSI integration into a 3-D WSI dual composite module
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机译:VLSI集成到3-D WSI双复合模块中
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摘要
The difficulty with integrating packaged devices into a dual composite module design for wafer scale devices is the height difference between the WSI and packaged devices a typical wafer scale device is 0. 025 (in) high while typical packaged VLSI components are 0.080 (in) or more. This leaves little room for the other 5 layers of interconnect boards and PCI layers required for the dual composite module. The solution is that the PWB on the side of the composite heat sink has been shortened to support only the wafer scale device on the heat sink. This eliminated PWB thickness and PCI interfaces from the side with the VLSI components. Also 3-P connectors are made with a pressure contact interconnecting (PCI) board.
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