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VLSI integration into a 3-D WSI dual composite module

机译:VLSI集成到3-D WSI双复合模块中

摘要

The difficulty with integrating packaged devices into a dual composite module design for wafer scale devices is the height difference between the WSI and packaged devices a typical wafer scale device is 0. 025 (in) high while typical packaged VLSI components are 0.080 (in) or more. This leaves little room for the other 5 layers of interconnect boards and PCI layers required for the dual composite module. The solution is that the PWB on the side of the composite heat sink has been shortened to support only the wafer scale device on the heat sink. This eliminated PWB thickness and PCI interfaces from the side with the VLSI components. Also 3-P connectors are made with a pressure contact interconnecting (PCI) board.
机译:将封装的器件集成到晶圆级器件的双复合模块设计中的困难在于WSI与封装器件之间的高度差,典型的晶圆级器件的高度为0. 025(in),而典型的封装VLSI组件的高度为0.080(in)或更多。这为双复合模块所需的其他5层互连板和PCI层留出了很少的空间。解决方案是,缩短了复合散热器侧面的PWB,以仅在散热器上支撑晶圆级器件。这样就从侧面消除了VWB组件的PWB厚度和PCI接口。 3-P连接器也由压力接触互连(PCI)板制成。

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