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Manufacturing method null of high tenacious nitriding silicon

机译:高韧氮化硅的制造方法无效

摘要

PURPOSE:To relatively readily obtain a highly tough calcined compact of silicon nitride, by forming and calcining a mixed powder, consisting essentially of silicon nitride powder and containing a calcining assistant containing MgO as a component and specific dispersed particles. CONSTITUTION:A mixed powder, consisting essentially of silicon nitride powder having =5mu average particle diameter and containing calcining assistant in an amount of 0.2-5vol.% expressed in terms of MgO and 1-50vol.% dispersed particles of one or more of nitrides, carbides of group IVa elements and solid solutions thereof having 1.5-10mu average particle diameter and =6X10-6/ deg.C thermal expansion coefficient is formed and calcined to afford the aimed calcined compact. If the average particle diameter of the silicon nitride powder to be used exceeds 5mu, improvement in toughness is not recognized. The preferred average particle diameter is =3mu, especially =1mu. TiN, TiC, ZrN, ZrC, HfN, HfC, etc., are cited as the dispersed particles.
机译:目的:通过形成并煅烧一种混合粉末,使其相对容易地获得高韧性的氮化硅煅烧压块,该混合粉末主要由氮化硅粉末组成,并包含一种煅烧助剂,该助烧剂含有作为成分的MgO和特定的分散颗粒。组成:一种混合粉末,主要由平均粒径小于等于5微米的氮化硅粉末组成,并且含有以MgO表示的0.2-5vol。%的煅烧助剂和以一种或多种形式的1-50vol。%的分散颗粒。形成并煅烧具有1.5-10μ的平均粒径和≥6X10-6 /℃的热膨胀系数的IVa族元素的氮化物,碳化物及其固溶体,以得到目标煅烧体。如果所使用的氮化硅粉末的平均粒径超过5μ,则无法确认韧性的提高。优选的平均粒径为≤3μ,特别是≤1μ。 TiN,TiC,ZrN,ZrC,HfN,HfC等被称为分散颗粒。

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