首页> 外国专利> APPARATUS FOR FORMING BUFFER LAYER FOR ALIGNED HIGH-TC TAPE SUPERCONDUCTOR AND APPARATUS FOR FORMING HIGH-DENSITY CAPACITOR

APPARATUS FOR FORMING BUFFER LAYER FOR ALIGNED HIGH-TC TAPE SUPERCONDUCTOR AND APPARATUS FOR FORMING HIGH-DENSITY CAPACITOR

机译:对准的高TC胶带超导体的缓冲层的形成装置和高密度电容器的形成装置

摘要

PURPOSE: To continuously and efficiently form a buffer layer for an aligned high-Tc tape superconductor by cleaning and polishing a tape substrate, then depositing a strontium titanate layer by evaporation thereon and bombarding the substrate by a laser beam. ;CONSTITUTION: The substrate 4 is delivered from a coil 6 and is degreased by the Freon solvent in a degreasing bath 8. The substrate 4 is then introduced into an electrolytic polishing bath 10 and is subjected to electrolytic polishing and thereafter, the substrate is introduced into an ultrasonic cleaning bath 12 where the substrate 4 is subjected to ultrasonic cleaning with deionized water. The substrate is further ultrasonically cleaned with acetone in an ultrasonic cleaning bath 14 and further ultrasonically cleaned with methanol in an ultrasonic cleaning bath 16. The cleaned substrate 4 is then introduced into a CVD chamber 18 where the strontium titanate layer is deposition by evaporation on the substrate 4 and thereafter, the substrate is bombarded by the laser beam in a laser processing chamber 22 and is cooled in a vacuum cooling chamber 37. The substrate is taken up to form a roll 38. As a result, the buffer layer for the aligned high-Tc tape superconductor is formed on the tape substrates 4.;COPYRIGHT: (C)1994,JPO
机译:目的:通过清洁和抛光胶带基材,然后通过在其上蒸发沉积钛酸锶层并用激光束轰击基材,连续有效地形成用于对齐的高Tc胶带超导体的缓冲层。 ;组成:衬底4从线圈6送出,并在脱脂槽8中被氟利昂溶剂除脂。然后将衬底4引入电解抛光槽10中,进行电解抛光,然后引入衬底进入超声清洗浴12,在其中用去离子水对基板4进行超声清洗。在超声清洗浴14中进一步用丙酮超声清洗衬底,并在超声清洗浴16中进一步用甲醇超声清洗。然后将清洗过的衬底4引入CVD室18,在其中通过蒸发将钛酸锶层沉积在CVD室18中。衬底4,然后在激光处理室22中用激光束轰击衬底,并在真空冷却室37中冷却。将衬底卷起来以形成辊38。结果,对准的缓冲层在胶带基片4上形成高Tc胶带超导体。版权所有:(C)1994,日本特许厅

著录项

  • 公开/公告号JPH06293596A

    专利类型

  • 公开/公告日1994-10-21

    原文格式PDF

  • 申请/专利权人 GENERAL ELECTRIC CO GE;

    申请/专利号JP19930289696

  • 发明设计人 SAVKAR SUDHIR DATTATRAYA;

    申请日1993-11-19

  • 分类号C30B29/22;B01J19/12;C01G1/00;C01G23/00;C23C16/40;H01B12/06;H01B13/00;H01G4/06;H01G4/10;H01G4/12;

  • 国家 JP

  • 入库时间 2022-08-22 04:53:45

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号