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Cutting process and device null of the monocrystal ingot by the inner circumference blade

机译:内周刃对单晶锭的切割工艺及装置无效

摘要

PURPOSE:To make it possible to obtain a wafer being warped little, by controlling the speed of cutting in a single-crystal ingot to be high and low alternately and repeatedly. CONSTITUTION:The speed of cutting in a single-crystal ingot 6 is controlled to be high and low alternately and repeatedly. An operation of a cut-in feeding unit 5 is controlling by a controller 8 and the moving speed of the cut-in feeding unit 5, i.e., the speed of cutting in the single-crystal ingot 6, is controlled in accordance with a program inputted beforehand in the controller 8. By this method, minute indentation is formed on the surface of a wafer, and by passing the wafer through lapping and etching process, the wafer being warped little can be obtained.
机译:目的:通过将单晶锭的切割速度交替和反复控制为高和低,以使晶片几乎不翘曲成为可能。组成:单晶锭6的切割速度被控制为交替和重复地高和低。切入式进给单元5的操作由控制器8控制,并且切入式进给单元5的移动速度,即,根据程序来控制单晶锭6中的切入速度。预先将其输入到控制器8中。通过这种方法,在晶片的表面上形成微小的凹痕,并且通过使晶片经过研磨和蚀刻工艺,可以获得很少翘曲的晶片。

著录项

  • 公开/公告号JPH0612768B2

    专利类型

  • 公开/公告日1994-02-16

    原文格式PDF

  • 申请/专利权人 SHINETSU HANDOTAI KK;

    申请/专利号JP19900126609

  • 发明设计人 TOYAMA KOHEI;

    申请日1990-05-18

  • 分类号H01L21/304;B28D1/22;

  • 国家 JP

  • 入库时间 2022-08-22 04:52:52

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