METHOD OF REMOVING DIELECTRIC FILM FROM SURFACE OF SEMICONDUCTOR MATERIAL MAIN BODY, METHOD OF REMOVING OXIDE FILM FROM SURFACE OF SEMICONDUCTOR MATERIAL MAIN BODY AND METHOD OF AVOIDING DETERIORATION OF SURFACE OF SEMICONDUCTOR MATERIAL MAIN BODY

摘要

PURPOSE: To provide a method of avoiding overetching, which is performed on the surface part of a semiconductor material main body. ;CONSTITUTION: Oxide films 14 and 12 are removed from the surface of a semiconductor material main body, which has the thick oxide film 14 and the thin oxide film 12 adjacent to the film 14, without performing overetching on the surface of the main body. Therefore, a method for avoiding the deterioration of the surface of the main body is disclosed. First, a photoresist layer 113 is deposited on the film 12 in such a way as to cover the film 12, then, the film 14 is left as one part of the film 14 is left and etched during a certain period in such a way that the thickness of the film 14 corresponds to that of the film 12. Then, the layer 113 covering the film 12 is removed without performing considerably etching on any of the residual part 115 of the film 14 and the film 12. Lastly, the film 12 and the residual part 115 of the film 14 can be removed without performing excessively overetching on the surface of the main body.;COPYRIGHT: (C)1994,JPO