首页> 外国专利> METHOD FOR PROCESSING OPST-ETCHING SOLUTIONS AFTER ETCHING BATHS BASED ON GCL SOLUTIONS, ESPECIALLY AFTER ETCHING IRON OR COPPER

METHOD FOR PROCESSING OPST-ETCHING SOLUTIONS AFTER ETCHING BATHS BASED ON GCL SOLUTIONS, ESPECIALLY AFTER ETCHING IRON OR COPPER

机译:基于GCL解决方案,尤其是在腐蚀铁或铜之后,在腐蚀之后进行处理的解决方法

摘要

1. A processing method for post-etching dips including HCl solutions, in particular after etching iron or copper, consisting in the removing of HCl at a higher temperature and in the absorption in water of the evaporated HCl, characterized in that the removing of HCl from the post-etching dip is carried out by desorption in the dynamic foam phase at 30-75 degrees C, and preferably at 40-60 degrees C, by removing the water solution of iron chlorides and the gaseous mixture that includes 5-16% per volume of hydrogen chloride with steam and 84-95% per volume of nitrogen with oxygen, whereas the oxygen content is lower than in air, and preferably lower by 0.30 up to 3.2% per volume, and further by contacting the gaseous mixture with a surface that mainly consists of elemental carbon that preferably makes approximately 67% of the area at least.
机译:1.一种用于后蚀刻包括HCl溶液的浸入物的处理方法,特别是在蚀刻铁或铜之后,其包括在较高温度下去除HCl以及在水中吸收蒸发的HCl,其特征在于,去除HCl通过在动态泡沫相中在30-75摄氏度(最好在40-60摄氏度)下进行解吸,除去氯化铁的水溶液和含有5-16%的气态混合物,从蚀刻后的浸出液蒸汽中每体积氯化氢和氧气中每体积氮84-95%,而氧气含量低于空气中,优选降低0.30到每体积中3.2%,并进一步使气态混合物与主要由元素碳组成的表面,最好至少占面积的67%。

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