Control technique and apparatus for in situ endpoint chemical / mechanical planarization detection.

摘要

This invention provides a control technique SITE AND APPARATUS FOR SCREENING CHEMICAL / mechanical planarization FINAL POINT IN SEMICONDUCTOR DEVICE MANUFACTURING PROCESS U OPTICOS. SEMICONDUCTOR DEVICES PRODUCING OPTICAL U OFTEN REQUIRES SMOOTH flat surfaces, either on the surface of a disc being manufactured or some intermediate stage EG A surface of a layer interleaved. PERFORMING herein detection by MEASURE Capacitive thickness of a dielectric layer on a substrate CONDUCTOR. The measure includes the dielectric layer, an electrode structure PLANE, and a liquid separating the article and the electrode structure. SUSPESION LUCIDANTE ACTS AS A FLUID SEPARATION. The electrode structure includes a measuring electrode, an insulator surrounding the measuring electrode, electrode GUARDIAN AND OTHER INSULATION surrounding the guard electrode. TO THE EXTENT A driving voltage supplied to the measuring electrode, AND A FITTING autoelevador A guard electrode surrounding it, thereby measuring the capacitance of the dielectric layer INTERESTING VOID OF INTERFERENCE FROM STRENGTH TO LOSS OF BYPASS. The process and apparatus are useful not only for measuring the thickness of dielectric layers SUBSTRATES LEADS IN SITU DURING planarization polishing without also to measure the thickness Dielectric Substrates in other processes, eg Measure the thickness of dielectric layer before or after rust processes.