A method of producing a metal silicide-silicon structure and a metal silicide-silicon structure

摘要

A metal silicide-silicon structure (FIG. 2) is produced by depositing the same metal (M) on first - (12) and second (13) silicon regions and forming, in a single thermal conversion step, different metal silicide phases (MS1, MS2) on the first and second silicon regions owing to a difference in the dopant and/or dopant level between the first and second silicon regions. The different metal silicide phases can be tailored for different applications, including ohmic contacts, diode barrier contacts, interconnection lines, gate contacts, and diffusion barriers.