Method for growing antimony-doped silicon single crystals

摘要

This is a method for growing antimony-doped silicon single crystal having an oxygen concentratlon of 12 ppma and more.;In this method the pressure of an atmospheric inert gas within the furnace is set at a range between 10 and 50 millibars, and also the reference rate of rotation of the quartz crucible is set at 5 rpm and more in pulling the antimony doped silicon single crystal having an antimony concentration of 6 x 10¹⁸ atom/cc and more from an antimony doped silicon melt contained in a quartz crucible according to the Czochralski process.;The reference rate of rotation can be increased in accordance with the increased length of the pulled single crystal, and further a pulse like change in rotation rate can be superimposed over the reference rate of rotation, so that the pulled single crystal can have a high and axially and radially uniform oxygen concentration throughout the entire length of the single crystal.