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Pseudo-electroless, followed by electroless, metallization of nickel on metallic wires, as for semiconductor chip-to-chip interconnections

机译:伪化学镀,然后化学镀镍,然后在金属线上镀镍,例如用于半导体芯片到芯片的互连

摘要

A nickel plug (31) filling an aperture in an insulating layer (30), such as polyimide, separating two metallization levels of copper wires (28, 25 and 38, 35) is formed by an electroless process in a plating bath (solution) containing ions of hypophosphite and of nickel. In preparation for this electroless process, the copper wires (28, 25) are first plated with a nickel layer (29) by a pseudo-electroless process--that is, a process in which the copper wires (28, 25) are located in contact with an underlying extended chromium layer (14) that is placed in electrical contact (including intimate physical contact) with an auxiliary metallic layer (41) that contains nickel, while both the copper wires (28, 25), the chromium layer (14), and at least a portion of the external metallic layer (41) are immersed in a plating solution likewise containing ions of hypophosphite and of nickel.
机译:通过在镀浴(溶液)中进行化学镀处理来形成镍塞(31),该镍塞(31)填充绝缘层(30)中的孔,该绝缘层将铜线(28、25和38、35)的两个金属化层分开,从而隔离了铜线(28、25和38,35)的两个金属化层包含次磷酸盐和镍离子。在准备该化学镀工序的过程中,首先,通过伪化学镀覆工序,即,将铜线(28、25)定位在其中的工序,对铜线(28、25)镀镍层(29)。与下面的延伸铬层(14)接触,该延伸铬层与包含镍的辅助金属层(41)电接触(包括紧密的物理接触),而铜线(28、25),铬层(然后,将外部金属层(41)的至少一部分浸入同样含有次磷酸根离子和镍离子的镀液中。

著录项

  • 公开/公告号EP0547815A3

    专利类型

  • 公开/公告日1994-07-27

    原文格式PDF

  • 申请/专利权人 AT&T CORP.;

    申请/专利号EP19920311095

  • 申请日1992-12-04

  • 分类号H01L21/60;H01L21/288;

  • 国家 EP

  • 入库时间 2022-08-22 04:39:29

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