A PROCESS FOR DEPOSITING A SIO X? FILM HAVING REDUCED INTRINSIC STRESS AND/OR REDUCED HYDROGEN CONTENT

摘要

process for reducing the intrinsic stress and / or the hydrogen content of the film siox applied by vapour deposition by chemical means. the process is applicable to the chemical vapour deposition and plasma enhanced the electron cyclotron resonance in silicon dioxide.in this process, a vapor phase reactant to attack is introduced in the application of the silicon dioxide film. the presence of reagent to attack during the plasma deposition process allows selective removal of molecules of the silicon dioxide film is applied in the high energy, thereby reducing the intrinsic stress within the film.the use of reactive halogen attack is to reduce the amount of hydrogen present as hydroxyl within the film.