Addition of Nitrogen-Containing Sources in the Atmospheric CVD Method of Semiconductor Device Fabrication Through Reaction of Organic Sources and Ozone

摘要

There is provided a method for manufacturing a semiconductor device which enables a film growth at a low temperature and produces a high quality interlayer insulating film exhibiting an excellent surface planar effect.;In the TEOS-O ₃ based atmospheric CVD method, film growth is performed by adding a source containing nitrogen to the TEOS source in the composition.;As a source, heptamethyl disilazine (Chemical Formula: (CH ₃ ) ₃ SiN (CH ₃ ) Si (CH ₃ ) ₃ , N, O-bis-trimethylsilyl acetamido (Chemical Formula: (CH ₃ ) C (OSi) CH ₃ ) ₃ ) (NSi (CH ₃ ) ₃ ) or tridimethylamino silane (formula: (CH ₃ ) ₂ N) ₃ SiN) is used.;In addition, a method of fabricating a semiconductor device capable of producing a high quality silicon oxide film capable of film growth at a uniform growth rate regardless of the substrate material and exhibiting an excellent surface planar effect is provided.;A silicon oxide film is grown on the substrate by conducting an organic source containing Si—N bonds in the composition and O ₃ to the substrate and reacting with each other at atmospheric pressure. The organic source is, for example, hexmethyl disilazine ((CH ₃ ) ₃ Si-N (H) -Si (CH ₃ ) ₃ ).