Method of measuring phase inversion material linewidth size of phase inversion mask

摘要

The present invention relates to a method of measuring the phase shift mask phase inversion material line width size in manufacturing a semiconductor device, comprising: forming a new pattern to obtain independent waveforms of chrome and phase inversion material according to a position of a light source, A pattern of the phase inversion material is formed on the quartz upper portion coated on the upper portion of the quartz, or a pattern of the phase inversion material is formed on the quartz portion not coated with chromium when the light source is under the mask, Is a technique for measuring the line-width size of the substrate.