首页> 外国专利> Halftone Phase Inversion Mask Manufacturing Halftone Phase Inversion Mask Manufacturing Method Halftone Phase Inversion Mask Manufacturing Method

Halftone Phase Inversion Mask Manufacturing Halftone Phase Inversion Mask Manufacturing Method Halftone Phase Inversion Mask Manufacturing Method

机译:半色调相反转掩模制造方法半色调相反转掩模制造方法

摘要

The present invention relates to a half-tone phase shifter, and more particularly, to a half-tone phase shifter having a half-tone phase shifter for forming a photoresist pattern by applying a positive photoresist on a general chrome mask, A quartz substrate is etched to a predetermined thickness to form a groove, the photoresist pattern is removed, and the photoresist layer is further coated on the entire structure. Then, the photoresist layer is left only in the bumps by the etch-back process, And etching the predetermined thickness of the chrome pattern and then removing the cured photoresist film, thereby forming a phase inversion mask having a better process margin than the conventional chrome mask.
机译:半色调移相器技术领域本发明涉及一种半色调移相器,更具体地,涉及一种具有半色调移相器的半色调移相器,该半色调移相器用于通过在普通铬掩模上施加正性光致抗蚀剂来形成光致抗蚀剂图案。蚀刻至预定厚度以形成凹槽,去除光致抗蚀剂图案,并在整个结构上进一步涂覆光致抗蚀剂层。然后,通过回蚀工艺仅在凸块中留下光致抗蚀剂层,并且蚀刻预定厚度的铬图案,然后去除固化的光致抗蚀剂膜,从而形成具有比常规铬更好的工艺裕度的相反转掩模。面具。

著录项

  • 公开/公告号KR950021059A

    专利类型

  • 公开/公告日1995-07-26

    原文格式PDF

  • 申请/专利权人 김주용;

    申请/专利号KR19930031846

  • 发明设计人 함영목;

    申请日1993-12-31

  • 分类号H01L21/27;

  • 国家 KR

  • 入库时间 2022-08-22 04:11:02

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