The present invention relates to a half-tone phase shifter, and more particularly, to a half-tone phase shifter having a half-tone phase shifter for forming a photoresist pattern by applying a positive photoresist on a general chrome mask, A quartz substrate is etched to a predetermined thickness to form a groove, the photoresist pattern is removed, and the photoresist layer is further coated on the entire structure. Then, the photoresist layer is left only in the bumps by the etch-back process, And etching the predetermined thickness of the chrome pattern and then removing the cured photoresist film, thereby forming a phase inversion mask having a better process margin than the conventional chrome mask.
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