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A method for culturing a half conductor crystal from iii - v - groups - connection on a si - substrate.
A method for culturing a half conductor crystal from iii - v - groups - connection on a si - substrate.
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机译:一种在si-基板上从iii-v-基团的连接中培养半导体晶体的方法。
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摘要
A chloride gas of In or Ga (group III elements) and a hydride gas of a group V element are alternately supplied to a growing chamber to grow a group III-V compound semiconductor crystal (19) on a Si substrate (14). As a result, the crystal has a good selective growth property and is of good quality. The growth may be achieved by rotating the substrate (14) to face alternately a chloride gas growing chamber (11), with a port (1) for supplying HCL and a boat (12) for the In or Ga and a hydride gas growing chamber (13) with a port (2) for introducing a gaseous hydride of the group V element.
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