Precise tension-free method of aftertreatment by free-radical reactions.

摘要

PURPOSE:To prevent any residual defects such as residual cracks, thermal degeneration layer etc., from occurring by a method wherein a gas is activated near works while compounds produced by radical reaction to constituent atoms or molecules of the works are gasified to process the works. CONSTITUTION:Radicals 3 are produced by discharging or laser beamexcitation in the part near the surface of works 1 arranged in atmospheric gas 2 so that compounds 5 gasifiable at relatively low temperature may be produced by the radical reaction of radicals 3 to the constituent atoms or molecules 4 of the works 1. Then, the compounds 5 are gasified at room temperature or the works 1 are gasified at relatively low temperature e.g. a specified temperature not exceeding 200 deg.C heated by a heater etc. to be removed from the processing surface so that cavities 6 in atomic or molecular unit may be successively formed in the works 1 as macrorecessions to perform no-strain cutting, perforating, grooving process etc. Through these procedures, the processes subjected to no residual defects at all can be performed.