A process for the measurement of electromagnetic radiation, semiconductors - radiation detector for carrying out the method and a process for producing a semiconductor - radiation detector

摘要

The epitaxially constructed semiconductor detector for the near infrared (50 microns to 1000 microns) utilises the adiabatic transportation. The detector comprises four resistive contacts (30,32,34,36), two situated at the ends of a central conductive channel (24) and one at the end of two smaller channels (26,28). Two Schottky gates (38,40) are located across the central channel. An edge region canal containing electron clouds is formed around the edges of the detector when the detector temperature is reduced to 1.3 deg.K and a strong magnetic field is applied through the detector. The electrochemical potential of the edge region canal is determined by the contacts in the canal, the current, the magnetic field strength and the gate electrodes. When infrared radiation strikes the detector the resistance between contacts in the edge region canals changes due to interaction with carriers in the detector, thus providing a means of detecting infrared light. USE/ADVANTAGE - Improved response time and increased sensitivity in comparison with existing far infrared detectors. Suitable for IC manufacturing techniques.