Process for the production of silicon / iron disilicide thin-film solar cells on graphite substrates by electron beam recrystallization

摘要

Silicon layers are applied to a graphite substrate with a matching thermal expansion coefficient via a vapour deposition process, before melting via an electron beam source to obtain a large crystal layer with good semiconductor qualities and ohmic contact with the graphite substrate. The layer is treated to obtain a III crystal orientation before application of a FeSi2 layer, having a different semiconductor conductivity, to provide a pn junction. ADVANTAGE - Mfg. process requires reduced material energy and time for cost-effective mfr.