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Thin film circuit manufacturing method - gilding remaining copper surfaces after removal of exposed parts of first relatively thin copper layer

机译:薄膜电路的制造方法-在去除第一层较薄的铜层的裸露部分后镀金剩余的铜表面

摘要

In the thin film circuit manufacturing method, the entire copper surface (Co1, Co2) is etched away so far in a second etching process, after removal of the photoresist layer, that the exposed part of the first, relatively thin copper layer (Cu1) are completely removed. The remaining copper surfaces are then gilded (Au). Finally these are etched away on the exposed sites by an etching agent which only attacks the titanium layer (Ti). The layers may be deposited by sputtering for the first and second vacuum processes. ADVANTAGE - Edges of conductive tracks are protected by gold layer guaranteeing corrosion protection of tracks.
机译:在薄膜电路的制造方法中,在去除光致抗蚀剂层之后,在第二蚀刻工艺中到目前为止,整个铜表面(Co1,Co2)都被蚀刻掉,以至于第一相对较薄的铜层(Cu1)的暴露部分被完全删除。然后将剩余的铜表面镀金(Au)。最后,这些仅通过腐蚀钛层(Ti)的腐蚀剂在暴露的位置上被腐蚀掉。可以通过溅射来沉积这些层以用于第一和第二真空工艺。优势-导电走线的边缘由金层保护,从而保证了走线的腐蚀保护。

著录项

  • 公开/公告号DE4235919A1

    专利类型

  • 公开/公告日1994-04-28

    原文格式PDF

  • 申请/专利权人 SIEMENS AG 80333 MUENCHEN DE;

    申请/专利号DE19924235919

  • 发明设计人 JAEGER ANDREAS 8017 EBERSBERG DE;

    申请日1992-10-23

  • 分类号H01L21/90;H01L23/532;H01L27/01;H05K3/16;

  • 国家 DE

  • 入库时间 2022-08-22 04:36:02

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