Suppression of nucleus formation on insulating layers used as a mask - by adsorbing particles of layer source and removing from surface during CVD semiconductor layer formation

摘要

Nucleus formation suppression on structured insulating layers is claimed, in which particles of layer source material, used for layer deposition, are adsorbed and removed from the surface of the mask material. The novelty is that, at a defined distance from the single crystalline epitaxial structure gp. to be coated, trench-like sinks are formed in the insulating material exposing the single crystalline wafer surface. The distance between the outer edge of the structure gp. and the trench-like sink surrounding it is smaller than the double migration length of particles of source materials adsorbed on the mask material. The max. bridge width of the mask material between the sinks or the structure gps. is smaller than the double migration length of particles adsorbed on the mask material. USE/ADVANTAGE - To suppress nucleus formation on insulating layers used on selective deposition of single crystalline semiconductor layers in a CVD process as mask material. Guarantees defined bridge widths of insulating material between trench-like sinks or structure gps..