Method for producing PZT materials having a high depolarisation resistance and a low sintering temperature

摘要

The invention relates to the fields of electrical engineering and electronics and concerns a method such as is used e.g. in the manufacture of piezoceramics. The object of the invention is to produce "hard PZT" materials which sinter below 1080 DEG C and also have Kr values of more than 55% and high vibratory quality. This object is achieved by a method which involves using as the starting materials modified PZT materials of the basic type (PbaSr1-a)(ZrxTi1-x-y-z(B11/3Nb2/3)y(B 2 1/2W1/2)z)O3 with a from 0.90 to 1.03 mol, x from 0.30 to 0.56 mol, with y from 0.01 to 0.30 mol, z from 0.01 to 0.07 mol, and B = Mg, Zn, Ni, Mn, Co, characterised in that prior to and/or during comminution of the starting materials, from 0.05 to 2% by weight of MnOx and from 0.1 to 5% by weight of oxide or oxide mixture which form a molten phase with PbO below 1000 DEG C, are added and during comminution from 0.3 to 3% by weight of NiO are added and all of this is sintered below 1100 DEG C.