High electron mobility transistor - has lattice mismatched spacer layer between electron supply and electron transfer layers

摘要

A HEMY-type III-V cpd. semiconductor device comprises (a) a III-V cpd. semiconductor substrate (21), (b) a III-V cpd. semiconductor, electron transfer layer (22) formed on the substrate, (c) an impurity-doped electron supply layer (24) which consists of a III-V cpd. semiconductor having a wider forbidden band and a lower electron transfer layer, and (d) a spacer layer (23) which is formed of a III-V cpd. semiconductor with a lattice constant not matching that of the electron supply layer and which is located between the electron transfer layer and the electron supply layer. ADVANTAGE - The device has good properties and uses an electron supply layer of material other than Si-doped AlGaAs.