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Reversible non-volatile switch based on a TCNQ charge transfer complex

机译:基于TCNQ电荷转移复合体的可逆非易失性开关

摘要

A solid-state synaptic memory matrix (10) having switchable weakly conductive connections at each node (24) whose resistances can be selectably increased or decreased over several orders of magnitude by control signals of opposite polarity, and which will remain stable after the signals are removed, comprises an insulated substrate (16), a set of electrical conductors (14) upon which is deposited a layer (18) of an organic conducting polymer, which changes from an insulator to a conductor upon the transfer of electrons, such as polymerized pyrrole doped with 7,7,8,8-tetracyanoquinodimethane (TCNQ), covered by a second set of conductors (20) laid at right angles to the first.
机译:一种固态突触存储矩阵(10),在每个节点(24)上具有可切换的弱导电连接,其极性可通过相反极性的控制信号在几个数量级上有选择地增加或减小,并且在信号变为零后将保持稳定去除的部分包括绝缘衬底(16),一组电导体(14),在其上沉积有机导电聚合物层(18),该有机导电聚合物层在电子转移(例如聚合)时从绝缘体变为导体掺杂有7,7,8,8-四氰基喹二甲烷(TCNQ)的吡咯,并由与第一套导体成直角的第二套导体(20)覆盖。

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