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Epitaxy of high T.sub.c superconducting films on (001) silicon surface
Epitaxy of high T.sub.c superconducting films on (001) silicon surface
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机译:(001)硅表面上高Tc超导膜的外延
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摘要
An epitaxial structure comprising a silicon containing substrate and a high T.sub.c copper-oxide-based superconducting layer, which may include an intermediate layer between the silicon substrate and the superconductor layer. Epitaxial deposition is accomplished by depositing a superconductor on a (001) surface of silicon in a manner in which the unit cell of the superconductor layer has two out of three of its crystallographic axes rotated 45 degrees with respect to the corresponding axes of the silicon unit cell, the remaining axis of the superconductor unit cell being normal to the Si (001) surface.
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