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Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof
Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof
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机译:具有阻止掺杂剂扩散的阻挡层的调制掺杂量子阱结构的半导体激光器及其制造方法
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摘要
The semiconductor laser comprises a Sn doped InP substrate 1, n- InGaAsP wave guide layer 2, 5 nm thick InGaAs well layer 3, 3.5 nm thick undoped InGaAsP layer 4, 3 nm thick p-InGaAsP modulation doping layer 5, 3.5 nm thick undoped InGaAsP layer 6, a modulation doping quantum well layer 7 with ten wells, a 90 nm thick p-InGaAsP layer 8, a p- InP clad layer 9 (Zn=7×10.sup.17 cm.sup.-3), p-n-p current block layer 10, and a mesa-shaped active layer region 11. An Au/sn n-electrode 12 and if Au/Zn p-electrode 13 are formed by vapor deposition to complete the laser structure.
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