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In situ growth of TL-containing oxide superconducting films

机译:含TL的氧化物超导膜的原位生长

摘要

In situ vapor phase growth of thallium containing superconductors is achieved by controlling thallium volatility. Thallium volatility is controlled by providing active oxygen at the surface of the growing material and by avoiding collisions of energetic species with the growing material. In the preferred embodiment, a thallium containing superconductor is grown by laser ablation of a target, and by provision of oxygen during growth. More specifically, a source of thallium, calcium, barium, copper and oxygen is created by laser ablation of a thallium rich target, generating an ablation plume that is directed onto a heated substrate through the oxygen, with the plume passing through oxygen having a pressure from 10.sup.-2 to ten torr. Epitaxial superconducting thin films of thallium, calcium, barium, copper and oxygen have been grown by this technique. Various superconducting phases may be engineered through use of this method.
机译:通过控制th的挥发性可以实现含th超导体的原位气相生长。通过在生长物质的表面提供活性氧并避免高能物质与生长物质的碰撞来控制hall的挥发性。在优选的实施方案中,通过激光烧蚀靶材并在生长过程中提供氧气来生长含al的超导体。更具体地,通过激光烧蚀富含th的靶来产生of,钙,钡,铜和氧的来源,产生烧蚀羽流,该烧蚀羽流通过氧气被引导到加热的基板上,并且羽流穿过具有一定压力的氧气。从10.sup.-2到10托this,钙,钡,铜和氧的外延超导薄膜已经通过该技术生长。通过使用该方法可以设计各种超导相。

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