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DRAM with memory cells having access transistor formed on solid phase epitaxial single crystalline layer and manufacturing method thereof
DRAM with memory cells having access transistor formed on solid phase epitaxial single crystalline layer and manufacturing method thereof
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机译:具有在固相外延单晶层上形成有存取晶体管的存储单元的dram及其制造方法
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摘要
Access transistors of memory cells in a DRAM are formed in a solid phrase epitaxial single crystalline layer on the surface of a silicon substrate. A bit line extending over the surface of an element isolation and insulation film is formed by patterning a polycrystalline silicon layer extending to the single crystalline silicon layer as a layer. A stacked capacitor is connected to one source/drain of the access transistor through a conductive layer extending to the single crystalline silicon layer and over a field oxide film. Part of the stacked capacitor extends over the bit line. The connection region of the bit line, the capacitor and the source/drain is formed above the element isolation and insulation film, so that the source/drain region of the access transistor can be reduced.
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