首页> 外国专利> UNIDIRECTIONAL INSULATING TYPE SWITCHING CIRCUIT, BIDIRECTIONAL INSULATING TYPE SWITCHING CIRCUIT, THREE-TERMINAL INSULATING TYPE SWITCHING CIRCUIT, THREE-TERMINAL BIDIRECTIONAL INSULATING TYPE SWITCHING CIRCUIT, MULTIPLE TERMINAL INSULATING TYPE SWITCHING CIRCUIT, MULTIPLE TERMINAL BIDIRECTIONAL INSULATING TYPE SWITCHING CIRCUIT, MULTIPLE TERMINAL SWITCHING TYPE BIDIRECTIONAL INSULATING TYPE SWITCHING CIRCUIT AND IGNITION DISTRIBUTION CIRCUIT

UNIDIRECTIONAL INSULATING TYPE SWITCHING CIRCUIT, BIDIRECTIONAL INSULATING TYPE SWITCHING CIRCUIT, THREE-TERMINAL INSULATING TYPE SWITCHING CIRCUIT, THREE-TERMINAL BIDIRECTIONAL INSULATING TYPE SWITCHING CIRCUIT, MULTIPLE TERMINAL INSULATING TYPE SWITCHING CIRCUIT, MULTIPLE TERMINAL BIDIRECTIONAL INSULATING TYPE SWITCHING CIRCUIT, MULTIPLE TERMINAL SWITCHING TYPE BIDIRECTIONAL INSULATING TYPE SWITCHING CIRCUIT AND IGNITION DISTRIBUTION CIRCUIT

机译:单向保温类型开关电路,双向保温类型开关电路,三端保温类型开关电路,三端双向保温类型开关电路,多个端子绝缘类型开关电路,多端双向保温类型开关电路,多个终端切换型双向保温类型开关电路和点火分配电路

摘要

PURPOSE: To improve insulating performance by increasing turning on/off speed and simultaneously shortening a time when an insulating state is destroyed transiently in turning on/off. ;CONSTITUTION: This circuit is constituted in such a way that a controllable unidirectional switch is comprised by connecting, for example, a diode 11 to the source of a transistor 1 that is a normally--on junction type FET, and a switch 2 and a diode 12 are connected in series by arranging their directions so as to hold a DC power source 4 there between them, and a closed circuit in which a backward bias voltage can be supplied between the gate and source of the diode 12 from the DC power source 4 when the switch 2 is turned on is formed so as to set the diode 12 on a diode 11 side, and also, by arranging both directions, and a resistor 5 which discharges capacitance between the gate and source when the switch 2 is turned off is provided. In this way, since the turning on of the transistor 1 can be controlled by a voltage zero, no forward bias means to function so as to delay the turning on/off is required.;COPYRIGHT: (C)1995,JPO
机译:目的:通过提高打开/关闭速度并同时缩短打开/关闭过程中瞬间破坏绝缘状态的时间来提高绝缘性能。组成:该电路的组成方式是:通过将二极管11连接到作为常通结型FET的晶体管1的源极,以及将开关2和二极管12通过布置其方向而串联连接,以在它们之间保持DC电源4;以及闭合电路,其中可以从DC电源在二极管12的栅极和源极之间提供反向偏置电压。形成当开关2接通时的源极4,以便将二极管12设置在二极管11侧,并且还通过布置两个方向,以及当开关2接通时使栅极和源极之间的电容放电的电阻器5。提供了关闭。这样,由于可以通过零电压来控制晶体管1的导通,所以不需要正向偏置装置来起作用以延迟导通/关断。;版权所有:(C)1995,JPO

著录项

  • 公开/公告号JPH07264030A

    专利类型

  • 公开/公告日1995-10-13

    原文格式PDF

  • 申请/专利权人 SUZUKI TOSHIYASU;

    申请/专利号JP19940219389

  • 发明设计人 SUZUKI TOSHIYASU;

    申请日1994-08-11

  • 分类号H03K17/687;F02P7/03;H02M1/08;H02M3/00;H02M5/257;

  • 国家 JP

  • 入库时间 2022-08-22 04:29:22

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