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MANUFACTURE OF CIRCUIT ELEMENT BY PHOTOLITHOGRAPHY, THERMALLY STABLE POLYIMIDE FILM, MIXED POLYIMIDE AND SEMICONDUCTOR DEVICE
MANUFACTURE OF CIRCUIT ELEMENT BY PHOTOLITHOGRAPHY, THERMALLY STABLE POLYIMIDE FILM, MIXED POLYIMIDE AND SEMICONDUCTOR DEVICE
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机译:通过照相照相术,热稳定的聚酰亚胺膜,混合的聚酰亚胺和半导体器件制造电路元件
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摘要
PURPOSE: To provide in a simple manner a polyimide composition, which absorbs irradiation in a rage of 400-450 nm and is stable above a specific temperature, an anti-reflection dielectric layer which is stable even at a high temperature, and a semiconductor device having the dielectric layer. ;CONSTITUTION: An IC is manufactured by photolithography, including such process, wherein a antireflection polyimide or polyimide precursor layer having at least one chromophore which is obtained from perylene and naphthalene, etc., while having sufficient absorption for attenuating irradiation at 405 or 436 nm is adhered on a base body, and then heated at 200-500°C.;COPYRIGHT: (C)1995,JPO
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