METHOD FOR GROWING CDTE ON SI SUBSTRATE BY MBE

摘要

PURPOSE: To provide a method for growing CdTe epitaxial layer stably on an Si substrate by MBE. ;CONSTITUTION: A Si (221) off substrate (3° off in the direction [-1 -1 4]) is employed for growing CdTe. In the substrate, lattice irregularity becomes 0 in the direction normal to step 3 because of the lattice relaxation. The substrate is cleaned at first by RCA cleaning before it is introduced to a growth system. The substrate is heated up to about 850°C in a preheat chamber where protective oxide is removed from the surface of the substrate before it is introduced into a growth chamber. Temperature of the substrate is set at a predetermined level in the growth chamber and a molecular beam of CdTe is projected to effect the growth. At first, CdTe is grown by 500Å at 200°C of substrate temperature and then it is annealed at 400°C for 10min without irradiating the molecular beam before CdTe is grown again at 300°C of substrate temperature thus obtaining a CdTe (112) off epitaxial layer 2. Half width of 220sec is obtained in X-ray diffraction. It is a very good value for CdTe/Si.;COPYRIGHT: (C)1995,JPO