METHOD OF FORMING THIN FILM OF STRAIN HETERO SUPERLATTICE STRUCTURE

摘要

PURPOSE: To obtain a thin film being excellent in the sharpness and flatness of an Si/Si-Ge hetero interface by a method wherein after an SiO_x film is formed on an Si-Ge layer, a reaction furnace is evacuated to be vacuum, the SiO_x film is removed by prescribed heating and an Si layer is formed on the Si-Ge layer wherefrom the SiO_x film is removed. ;CONSTITUTION: An Si-Ge layer 12 is formed on a substrate 10 and a reaction furnace is evacuated so that vacuum be 1×10^-6 to 1×10^-4Pa. On the Si-Ge layer 12, thereafter, an SiO_x film (0.8x≤1.5) 14 of a film thickness l to 4nm is formed with a mixed gas of a dilution oxygen-series gas and a silicon- containing group IV-series hydrogen gas used and by prescribed heating. After the reaction furnace is evacuated to be vacuum so that the vacuum be made 1×10^-8Pa at the maximum, moreover, the SiO_x film 14 is removed by prescribed heating. An Si layer 16 is formed on the Si-Ge layer 12 wherefrom the SiO_x film 14 is removed.;COPYRIGHT: (C)1995,JPO