ATOMIC LAYER CRYSTAL GROWTH METHOD

摘要

PURPOSE: To provide a multilayer film of monoatomic crystalline layers of various materials in a wide range of temperature by a method wherein each material is deposited thicker than an atomic layer, and then etching gas is supplied so as to selectively reduce the deposit to the thickness of one atomic layer. ;CONSTITUTION: An InAs substrate is used as a growth substrate 2. A growth chamber is exhausted, and gallium hydride quinuclidine additive 10 is supplied as material gas. The surface of the substrate 2 is covered with Ga, and hydrogen chloride gas 12 is supplied as etching gas. Thereafter, tris(dimethylamino) antimony 11 is supplied to cover a growth surface with Sb. Then, hydrogen chloride gas 12 is fed again, and a monomolecular layer of GaSb is growth through this cycle of supply.;COPYRIGHT: (C)1995,JPO