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SURFACE TREATMENT FOR STAINLESS STEEL MATERIAL FOR SEMICONDUCTOR-MANUFACTURING EQUIPMENT
SURFACE TREATMENT FOR STAINLESS STEEL MATERIAL FOR SEMICONDUCTOR-MANUFACTURING EQUIPMENT
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机译:半导体制造设备用不锈钢材料的表面处理
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摘要
PURPOSE: To obtain a surface treated stainless steel excellent in corrosion resistance even to halogen gas, such as Cl2, HCl, and F2, having smooth surface, hardly causing adsorption of moisture, etc., and having superior properties required of material for semiconductor-manufacturing equipment. ;CONSTITUTION: The surface of a stainless steel material is mechanically ground by using abrasive grains of 1-10μm grain size and the half-width 2θ of diffraction lines in the 111 plane of austenitic iron, by X-ray diffraction, in the working strain layer formed on the surface is regulated to ≥0.5°, and then, heating treatment is done in an atmosphere of low partial pressure of oxygen, by which an oxide film composed essentially of Cr, having ≥200Å thickness and ≤1μm surface roughness Rmax, can be formed. By this method, the denser oxide film enriched in Cr can be formed.;COPYRIGHT: (C)1994,JPO
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机译:用途:为了获得一种表面处理过的不锈钢,该材料即使对卤素气体(如Cl 2 Sub>,HCl和F 2 Sub>)也具有优异的耐腐蚀性,并且表面光滑,几乎不引起吸附具有防潮性等优点,并具有半导体制造设备材料所需的优异性能。 ;组成:不锈钢材料的表面通过在工作应变下使用1-10μm粒度的磨料和奥氏体铁111平面上衍射线的半角2θ进行机械研磨,通过X射线衍射将在表面上形成的氧化层调节到≥0.5°,然后在氧分压低的气氛中进行热处理,通过该热处理,基本上由Cr构成的氧化膜具有≥200ang的厚度。可以形成厚度小于等于1μm的表面粗糙度R max Sub>。通过这种方法,可以形成致密的,富含Cr的氧化膜。;版权所有:(C)1994,日本特许厅
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