METHOD FOR FORMATION OF TITANIUM NITRIDE ON SEMICONDUCTOR WAFER BY REACTION OF NITROGEN-CONTAINED GAS WITH TITANIUM IN INTEGRATED TREATMENT SYSTEM

摘要

PURPOSE: To form a titanium nitride conductive layer which can be functioned as a local interconnection part by a method wherein a titanium-covered semiconductor wafer is annealed under a specific reaction condition in a nitrogen- containing gas atmosphere in a closed annealing chamber, and the stable phase of stoichiometric titanium nitride is formed on the wafer. CONSTITUTION: A titanium-coated wafer 100 is moved to an annealing chamber without exposing the surface of titanium to oxygen-containing gas, the wafer 100 is annealed in the annealing chamber at about 400 deg.C to about 650 deg.C for about 20 to 60 seconds, then it is annealed at about 800 deg.C to about 900 deg.C for about 20 to 60 seconds, the titanium nitride compound, which is formed at the initial annealing temperature, is converted to a more stabilized stoichiometric titanium nitride, and titanium silicide is converted to a more stabilized phase. As a result, a titanium nitride layer 130 is formed on the entire structure by the reaction between a titanium layer 120 and the nitride-containing gas in the annealing chamber.