首页> 外国专利> MICRO-LITHOGRAPHIC RESIST COMPOSITION, ACID INSTABILITY COMPOUND, FORMATION OF MICRO-LITHOGRAPHIC RELIEF IMAGE AND ACID SENSITIVE POLYMER COMPOSITION

MICRO-LITHOGRAPHIC RESIST COMPOSITION, ACID INSTABILITY COMPOUND, FORMATION OF MICRO-LITHOGRAPHIC RELIEF IMAGE AND ACID SENSITIVE POLYMER COMPOSITION

机译:微光刻胶组成,酸不稳定性化合物,微光刻胶图像的形成和酸敏感聚合物的组成

摘要

PURPOSE: To provide a compsn. which is hardly subjected to a disadvantageous reaction with environment pollutant material and to enhance the allowance to the variable or long delay between exposure and baking after the exposure or between the baking after the exposure and developing. CONSTITUTION: This aq. base developable microlithographic resist compsn. contains a film formable polymer, such as polyhydroxy styrene having chemically bonded iterative hydroxyl groups, an acid unstable compd. contg. a ketal component, such as 2-(2-methoxypropyl) and an acid generating compd., such as N-(trifluoromethyl sulfonyloxy)-nitronaphthalimide, which forms an acid by exposure to chemical rays in the mixture. The acid generated by the exposure induces cleavage of at least part of the compds. contg. the ketal component and the exposed compsn. is made selectively more soluble in the aq. base as compared with the non-exposed compsn.
机译:目的:提供一个compsn。它几乎不与环境污染物材料发生不利的反应,并增加了对曝光后与烘烤后之间或曝光与显影后烘烤之间的可变或长时间延迟的余地。宪法:这水。基础可显影的微光刻抗蚀剂组合物。含有可成膜的聚合物,例如具有化学键合的迭代羟基的聚羟基苯乙烯,酸不稳定化合物。续缩酮组分,例如2-(2-甲氧基丙基)和产酸化合物,例如N-(三氟甲基磺酰氧基)-硝基萘二甲酰亚胺,其通过暴露于混合物中的化学射线形成酸。暴露产生的酸引起至少一部分化合物的裂解。续缩酮成分和暴露的成分。使其选择性地更溶于水。与未曝光的compsn比较。

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