METHOD FOR LOCAL DETERMINING OF CONCENTRATION AND MOBILITY OF CHARGE CARRIER IN SEMICONDUCTORS AND SEMIMETALS

摘要

Invention enables the simplification of the measurement of measure of thick multi-layer structure surface layer parameters. The aim is achieved by the fact that a tested plate shape example is affected by a permanent magnetic field vertical to the largest plane surface of the plate in a local point of it's surface, excites AD magnetic field by the induction probe put in the largest plane surface of the plate, and registers EVJ by the other inductive probe created on a surface by the magnetoplasm wave fibre passed through the example and a support signal at the different meanings of the permanent magnetic field, sets the dependency of the EVJ extremities on the permanent magnetic field and calculates parameters according to the formula. The local AD field is created by the inductive probe non-orientated towards the permanent magnetic field. The EVJ is induced also on the plate's plane surface by the non-orientated inductive probe put on the same plane surface of the plate as the excitation probe however behind the boundaries of the probe, and for the registration is used the EVJ created by the excitation probe and wave reflection from the inside layer of a wall.