首页> 外国专利> Symmetrical Multi-Layer Metal Logic Array with Continuous Substrate Taps and Extension Portions for Increased Gate Density

Symmetrical Multi-Layer Metal Logic Array with Continuous Substrate Taps and Extension Portions for Increased Gate Density

机译:具有连续衬底抽头和扩展部分的对称多层金属逻辑阵列,可提高门密度

摘要

A gate array architecture is disclosed that utilizessignificantly less silicon area than the prior art. The core cellincludes a four transistor arrangement in which a substrate tap islocated adjacent to the transistor pair. This provides for a more"symmetric" cell array than those in the prior art. Through theplacement of the taps outside of the transistors the power lineconnections can be routed in a simple and efficient manner. Thearchitecture includes an extension portion in the contact region ofthe cell to further reduce wiring complexity. In addition the gatearray architecture mirrors pairs of transistor columns to allow forthe sharing of substrate taps between pairs of columns. Thismirroring feature further reduces routing complexity.
机译:公开了一种利用硅面积比现有技术小得多。核心细胞包括一个四晶体管装置,其中衬底抽头是位于晶体管对附近。这提供了更多“对称”单元阵列比现有技术中的阵列更为“对称”。通过将抽头放置在电源线以外的晶体管上连接可以以简单有效的方式进行路由。的架构包括在接触区域的延伸部分单元以进一步降低布线复杂性。另外门阵列架构可镜像成对的晶体管列,以实现成对的柱子之间共用基板抽头。这个镜像功能进一步降低了路由复杂度。

著录项

  • 公开/公告号CA2126479A1

    专利类型

  • 公开/公告日1995-02-27

    原文格式PDF

  • 申请/专利权人 ASPEC TECHNOLOGY INC.;

    申请/专利号CA19942126479

  • 发明设计人 YIN PATRICK;

    申请日1994-06-22

  • 分类号H01L27/118;H01L27/105;

  • 国家 CA

  • 入库时间 2022-08-22 04:16:13

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