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Symmetrical multi-layer metal logic array with continuous substrate taps and extension portions for increased gate density

机译:具有连续衬底抽头和延伸部分的对称多层金属逻辑阵列,可提高栅极密度

摘要

A gate array architecture is disclosed that utilizes significantly less silicon area than the prior art. The core cell includes a four transistor arrangement in which a substrate tap is located adjacent to the transistor pair. This provides for a more "symmetric" cell array than those in the prior art. Through the placement of the taps outside of the transistors the power line connections can be routed in a simple and efficient manner. The architecture includes an extension portion in the contact region of the cell to further reduce wiring complexity. In addition the gate array architecture mirrors pairs of transistor columns to allow for the sharing of substrate taps between pairs of columns. This mirroring feature further reduces routing complexity.
机译:公开了一种门阵列架构,其利用的硅面积比现有技术少得多。核心单元包括四个晶体管布置,其中衬底抽头位于邻近晶体管对的位置。与现有技术相比,这提供了更“对称”的单元阵列。通过将抽头放置在晶体管的外部,可以以简单而有效的方式对电源线连接进行布线。该体系结构在单元的接触区域中包括延伸部分,以进一步降低布线复杂度。另外,门阵列架构镜像了成对的晶体管列,以允许在成对的列之间共享衬底抽头。该镜像功能进一步降低了路由复杂性。

著录项

  • 公开/公告号US5493135A

    专利类型

  • 公开/公告日1996-02-20

    原文格式PDF

  • 申请/专利权人 ASPEC TECHNOLOGY INC.;

    申请/专利号US19950376404

  • 发明设计人 PATRICK YIN;

    申请日1995-01-23

  • 分类号H01L27/10;H01L27/02;

  • 国家 US

  • 入库时间 2022-08-22 03:39:00

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