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High-Tc microbridge superconductor device utilizing stepped edge-to-edge sns junction

机译:利用阶梯式边对边sns结的高温度微桥超导体器件

摘要

A microbridge superconductor device includes a substrate (26), made of a material such as LaAlO3, having a lower planar substrate surface (40), an inclined surface (42) having an overall upward inclination of from about 20 to about 80 degrees from the plane of the lower planar substrate surface (40), and an upper planar substrate surface (44) parallel to the lower planar substrate surface and separated from the lower planar substrate surface by the inclined surface. A layer of a c-axis oriented superconductor material (50), made of a material such as YBa2Cu3O7-x, is epitaxially deposited on the lower planar substrate surface, and has an exposed a-axis edge adjacent the intersection of the lower planar substrate surface with the inclined surface. The a-axis exposed edge is beveled away from the intersection. A layer of a c-axis oriented superconductor material (52) is epitaxially deposited on the upper planar substrate surface, and has an exposed a-axis edge adjacent the inclined surface. A gap (62) lies between the two a-axis exposed edges. A layer of a non-superconductor material (60), such as silver, lies in the gap between the two exposed a-axis edges, thereby defining a SNS superconductor microbridge device. The layers of superconductor material are preferably patterned to form a Josephson junction device such as a superconducting quantum interference device. IMAGE
机译:一种微桥超导装置,包括由诸如LaAlO3之类的材料制成的基板(26),该基板具有较低的平面基板表面(40),倾斜表面(42),其相对于基板的整体向上倾斜大约20至大约80度。下部平面基板表面(40)的平面和与下部平面基板表面平行并通过倾斜表面与下部平面基板表面分开的上部平面基板表面(44)。由诸如YBa2Cu3O7-x之类的材料制成的c轴取向超导体材料层(50)外延沉积在下部平面基板表面上,并且具有与下部平面基板的交叉点相邻的暴露的a轴边缘。表面倾斜的表面。 a轴的暴露边缘从相交处倾斜。一层c轴取向的超导体材料(52)外延沉积在上平面基板表面上,并且具有与倾斜表面相邻的暴露的a轴边缘。在两个a轴暴露的边缘之间存在间隙(62)。一层非超导体材料(60),例如银,位于两个暴露的a轴边缘之间的间隙中,从而定义了SNS超导体微桥器件。优选地,将超导体材料的层图案化以形成约瑟夫森结器件,诸如超导量子干涉器件。 <图像>

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