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Semiconductor laser that generates second harmonic light by means of a nonlinear crystal in the laser cavity

机译:半导体激光器,通过激光腔中的非线性晶体产生二次谐波光

摘要

A surface-emitting laser with an integral nonlinear crystal (19) generates light at a fundamental frequency. The nonlinear crystal converts the light into light at twice the fundamental frequency. The laser is configured in a vertical-cavity, surface-emitting structure. An adhesive layer (17) containing indium such as indium gallium phosphide is disposed between a phosphide nonlinear crystal (19) and an arsenide optical amplifier (15). The optical amplifier and the nonlinear crystal are fused together. The optical amplifier and the nonlinear crystal are located inside a laser cavity (29) that is defined between a pair of reflectors (13,21). One of the reflectors (21) is located adjacent the nonlinear crystal and is highly reflective of light at the fundamental frequency but transmissive of light at twice the fundamental frequency. Light is generated at the fundamental frequency, doubled in frequency as it passes back and forth through the nonlinear crystal, and emitted (31,35) through the reflector adjacent the nonlinear crystal. An intracavity reflector (33) may be included between the optical amplifier and the nonlinear crystal to prevent light at twice the fundamental frequency from propagating from the nonlinear crystal into the optical amplifier.
机译:具有整体非线性晶体(19)的表面发射激光器产生基频光。非线性晶体将光转换为基频两倍的光。激光器配置为垂直腔表面发射结构。在磷化物非线性晶体(19)与砷化物光放大器(15)之间配置有包含磷化铟镓等铟的粘接剂层(17)。光放大器和非线性晶体融合在一起。光放大器和非线性晶体位于限定在一对反射器(13,21)之间的激光腔(29)内。反射器(21)之一位于非线性晶体附近,并且对基频的光具有高反射性,但是对基频的两倍具有透光性。光以基频产生,在来回穿过非线性晶体时,其频率加倍,并通过与非线性晶体相邻的反射器发出(31,35)。在光放大器和非线性晶体之间可以包括腔内反射器(33),以防止以两倍于基频的光从非线性晶体传播到光放大器中。

著录项

  • 公开/公告号EP0654873A1

    专利类型

  • 公开/公告日1995-05-24

    原文格式PDF

  • 申请/专利权人 HEWLETT-PACKARD COMPANY;

    申请/专利号EP19940308586

  • 发明设计人 YANG LONG;RAMRAJEEV;

    申请日1994-11-21

  • 分类号H01S3/085;H01S3/109;H01S3/025;G02F1/37;H01L33/00;

  • 国家 EP

  • 入库时间 2022-08-22 04:12:49

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