首页> 外国专利> SEMICONDUCTOR LASER WITH AN ACTIVE FILM DISPOSED BETWEEN TWO RESONATOR MIRRORS, AND A METHOD FOR PRODUCING THE LASER

SEMICONDUCTOR LASER WITH AN ACTIVE FILM DISPOSED BETWEEN TWO RESONATOR MIRRORS, AND A METHOD FOR PRODUCING THE LASER

机译:具有两个谐振镜之间的有源膜的半导体激光器及其制造方法

摘要

The aims of the invention are to standardize the manufacturing technology used for laser structures which radiate vertically or parallel to the surface of the substrate, to make the film structure of semiconductor lasers which radiate vertically to the surface of the substrate simple to manufacture, and to provide a solution to the problem of high track resistances in the two semiconductor lasers mentioned above. In both cases, this is achieved by positioning the plane in which the active film of the semiconductor laser is located such that the plane makes an angle different from 90 , preferably an angle of 0 , with the normal to the substrate surface. The invention is suitable for use in all fields in which semiconductor lasers are used.
机译:本发明的目的是标准化用于垂直或平行于基板表面辐射的激光结构的制造技术,以使得垂直于基板表面辐射的半导体激光器的膜结构易于制造,并且提供了解决上述两个半导体激光器中的高走线电阻问题的解决方案。在这两种情况下,这都是通过将半导体激光器的有源膜所在的平面定位成使得该平面相对于基板表面的法线成不同于90度的角度,最好是0度的角度来实现的。本发明适用于使用半导体激光器的所有领域。

著录项

  • 公开/公告号EP0663110A1

    专利类型

  • 公开/公告日1995-07-19

    原文格式PDF

  • 申请/专利权人 SIEMENS AKTIENGESELLSCHAFT;

    申请/专利号EP19930920657

  • 发明设计人 HOEGER REINERDR.;HEINECKE HARALDDR.;

    申请日1993-09-23

  • 分类号H01S3/085;

  • 国家 EP

  • 入库时间 2022-08-22 04:12:38

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