Process for the production of a blue-sensitive photodetector

摘要

The method in accordance with the invention is characterized by the steps of before an ion implantation, a dielectric diffusing layer array is formed on a substrate that has at least one oxide layer and is thick enough for the maximum of implanted ions to be inside the layer array; and post-diffusion is implemented such that no further oxidation of the substrate is possible. By these measures, it is achieved that within the semiconductor substrate the doping continually decreases towards the pn-junction, apart from a very narrow segregation area, the result being an electrical field that conducts substantially all charge carriers generated in the area between the surface of the substrate and the pn-junction to this pn-junction. This achieves a quantum efficiency in the short-wave range that is considerably greater than that achievable with conventional photodetectors.