Drive circuit for MOSFET or IGBT power semiconductor components

摘要

The invention relates to a drive circuit for a MOSFET or IGBT power semiconductor component (B) which is suitable for controlling a current (iL) which flows through an inductive load (L), drive signals (S) being conducted from a drive signal input (SE) followed by a gate bias resistor (Rg) to the gate (G) of the power semiconductor component (B). To reduce the switching losses, it is proposed to achieve a selective slowing down of the switching process by means of a feedback from the collector (C) of the component (B) via a capacitor (C1) to the input (ETr) of the driver stage (Q1, Q2) and by arranging a resistor (R1) at the input ETr). IMAGE