method for the manufacture of a contact on a halbleitereinrichtung and in accordance with the procedure halbleitereinrichtung produced.

摘要

The present invention provides a semiconductor device, comprising a substrate (1), a first insulation layer (5) formed on the substrate (1), a first wiring layer (6) formed on the first insulation layer (5), a second insulation layer (7) formed on the first wiring layer and having a contact hole (8), and a third insulation layer (10) formed on the second insulation layer (7), said third insulation layer (10) being in contact with the first wiring layer (6) via the contact hole (8).