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Electron source, with part chen retentive arrangement.
Electron source, with part chen retentive arrangement.
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机译:电子源,具有部分陈保持结构。
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摘要
The present invention relates to a source of electrons to the vacuum arc having a plasma source having an anode and a cathode placed opposite - to - screw so as to form a plasma (p) to the remainder of the apllication of a suitable potential difference between the anode and cathode, a device (30) of the electron extraction and a material retaining device located between the extraction device and the plasma source. According to the invention, the material retaining device comprises, in the direction (f) of the electron extraction, at least one upstream baffle (10) and a downstream baffle (20) electrically conductive and having openings (16, 26) in a staggered configuration, so that, when the baffles (10, 20) are brought to a given potential, the plasma (p) does not extend to downstream of the downstream baffle (20).
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