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Electron source, with part chen retentive arrangement.

机译:电子源,具有部分陈保持结构。

摘要

The present invention relates to a source of electrons to the vacuum arc having a plasma source having an anode and a cathode placed opposite - to - screw so as to form a plasma (p) to the remainder of the apllication of a suitable potential difference between the anode and cathode, a device (30) of the electron extraction and a material retaining device located between the extraction device and the plasma source. According to the invention, the material retaining device comprises, in the direction (f) of the electron extraction, at least one upstream baffle (10) and a downstream baffle (20) electrically conductive and having openings (16, 26) in a staggered configuration, so that, when the baffles (10, 20) are brought to a given potential, the plasma (p) does not extend to downstream of the downstream baffle (20).
机译:电子真空源技术领域本发明涉及一种真空源的电子源,该电子源具有等离子体源,该等离子体源具有与螺钉相对设置的阳极和阴极,以形成等离子体(p),在其余部分之间形成适当的电势差。阳极和阴极,电子提取装置(30)和位于提取装置与等离子体源之间的材料保持装置。根据本发明,材料保持装置在电子提取的方向(f)上包括至少一个导电的上游挡板(10)和下游挡板(20),并具有交错排列的开口(16、26)。因此,当将挡板(10、20)带到给定电位时,等离子体(p)不会延伸到下游挡板(20)的下游。

著录项

  • 公开/公告号DE69107162T2

    专利类型

  • 公开/公告日1995-08-31

    原文格式PDF

  • 申请/专利权人 PHILIPS ELECTRONICS NV NL;

    申请/专利号DE1991607162T

  • 发明设计人 BERNARDET HENRI FR;

    申请日1991-10-03

  • 分类号H01J3/02;

  • 国家 DE

  • 入库时间 2022-08-22 04:07:59

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