Process for the production of a semiconductor laser with a buried strip structure using dry kits for the production of this strip and a laser produced according to this process.

摘要

According to this method, a heterostructure is formed by a first epitaxial growth during which a confinement layer (22) having a first type of doping, an active layer (24) and a protective layer (28) are deposited on a substrate (20), the protective layer and the active layer are etched by a technique of reactive ion beam etching by means of a gaseous mixture of argon, methane and hydrogen, down to the confinement layer, so as to form a strip (32) starting from the active layer, and the strip is buried, by a second epitaxial growth, in a semiconductor layer (36) having a second type of doping opposite to the first. …??Application to optical telecommunications. …IMAGE…